Component information
Si Cell MB-3000Si
Overview
Conventional K cell has not been able to obtain stable thin film deposition rate since the maximum heating temperature of the K cell was 1300℃ when depositing Si. But this Si cell can be heated up to 1600℃ and it can secure stable deposition rate.
Product specifications
1. Maximum heating temp. 1600℃ (1500℃ for continuous deposition)
2. Heater material Graphite
3. Crucible capacity 14cc
Crucible material Tantalum
4. Thermo-couple WRe (5-26)
5. Mounting flange CF 114mm OD
6. Shutter operation Pneumatic
